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[IEEE 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Chengdu, China (2014.6.18-2014.6.20)] 2014 IEEE International Conference on Electron Devices and Solid-State Circuits - A 700 V low specific on-resistance self-isolated DB-nLDMOS

[IEEE 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Chengdu, China (2014.6.18-2014.6.20)] 2014 IEEE International Conference on Electron Devices and Solid-State Circuits - A 700 V low specific on-resistance self-isolated DB-nLDMOS

Kun Mao, ; Ming Qiao, ; Wentong Zhang, ; Zhaoji Li, ; Bo Zhang,

作者Kun Mao, ; Ming Qiao, ; Wentong Zhang, ; Zhaoji Li, ; Bo Zhang,
文件大小699.54KB
发表时间2014
DOI10.1109/edssc.2014.7061111
页码1-2

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