Analytical Modeling of Threshold Voltage of Short-Channel Strained-Si on Silicon–Germanium-On-Insulator (SGOI) Metal–Oxide–Semiconductor Field-Effect Transistors with Localized Charges
- 期刊名称Journal of Computational and Theoretical Nanoscience
- 作者Kumar, Mirgender; Dubey, Sarvesh; Kumar Tiwari, Pramod; Jit, S.
- 卷第11卷
- 期第1期
- 印刷ISSN1546-1955
- 电子ISSN1546-1963
- 文件大小1377.00KB
- 发表时间2014-01-01
- DOI10.1166/jctn.2014.3332
- 页码165-172
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