Effect of stacking fault in silicon induced by nanoindentation with MD simulation
- 期刊名称Materials Science in Semiconductor Processing
- 作者Guo, Xiaoguang; Zhai, Changheng; Liu, Ziyuan; Zhang, Liang; Jin, Zhuji; Guo, Dongming
- 卷第30卷
- 印刷ISSN1369-8001
- 文件大小6719.92KB
- 发表时间2015-02
- DOI10.1016/j.mssp.2014.09.029
- 页码112-117
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