Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing
- 期刊名称IEEE Electron Device Letters
- 作者Ghobadi, Nayereh; Pourfath, Mahdi
- 卷第36卷
- 期第3期
- 印刷ISSN0741-3106
- 电子ISSN1558-0563
- 文件大小384.56KB
- 发表时间2015-3
- DOI10.1109/LED.2014.2388452
- 页码280-282
Determinants of audit report lagAfify, H.A.E. · Journal of Applied Accounting Research · 2009
Outsourcing decision under Utopian environmentRay, Amitava; Sarkar, Bijan; Sanyal, Subir · Journal of Applied Accounting Research · 2008
Corporate social responsibilityMenassa, Elie · Journal of Applied Accounting Research · 2010
Opening the “black box”Mundy, Julia; Cavélius, Florence · Journal of Applied Accounting Research · 2011
Auditor acceptance of dysfunctional behaviourPaino, Halil; Smith, Malcolm; Ismail, Zubaidah · Journal of Applied Accounting Research · 2012
Intangible assets in GermanyFrey, Hannes; Oehler, Andreas · Journal of Applied Accounting Research · 2014
Accounting data and UK dividendsAtieh, Abdallah; Hussain, Simon · Journal of Applied Accounting Research · 2012
Forecasting in Austrian companiesOthmar M. Lehner, Professor; Hofer, Peter; Eisl, Christoph; Mayr, Albert · Journal of Applied Accounting Research · 2015