Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range

• 期刊名称IEEE Transactions on Power Electronics
• 作者Licciardo, Gian Domenico; Bellone, Salvatore; Di Benedetto, Luigi
• 卷第30卷
• 期第10期
• 印刷ISSN0885-8993
• 电子ISSN1941-0107
• 文件大小1136.73KB
• 发表时间2015-10
• DOI10.1109/TPEL.2014.2376778
• 页码5800-5809