Design consideration of GaAs-based blocked-impurity-band detector with the absorbing layer formed by ion implantation
- 期刊名称Optical and Quantum Electronics
- 作者Wang, Xiaodong; Wang, Bingbing; Hou, Liwei; Xie, Wei; Chen, Xiaoyao; Pan, Ming
- 卷第47卷
- 期第6期
- 印刷ISSN0306-8919
- 电子ISSN1572-817X
- 文件大小678.76KB
- 发表时间2015-6
- DOI10.1007/s11082-014-0064-3
- 页码1347-1355
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