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Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun
  • 期刊名称Electronic Materials Letters
  • 作者Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun
  • 卷第11卷
  • 期第2期
  • 印刷ISSN1738-8090
  • 电子ISSN2093-6788
  • 文件大小1025.02KB
  • 发表时间2015-3
  • DOI10.1007/s13391-014-4305-1
  • 页码198-205
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