Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure

Bagraev, N. T.; Danilovskii, E. Yu.; Gets, D. S.; Kalabukhova, E. N.; Klyachkin, L. E.; Koudryavtsev, A. A.; Malyarenko, A. M.; Mashkov, V. A.; Savchenko, D. V.; Shanina, B. D.

期刊名称Semiconductors
作者Bagraev, N. T.; Danilovskii, E. Yu.; Gets, D. S.; Kalabukhova, E. N.; Klyachkin, L. E.; Koudryavtsev, A. A.; Malyarenko, A. M.; Mashkov, V. A.; Savchenko, D. V.; Shanina, B. D.
卷第49卷
期第5期
印刷ISSN1063-7826
电子ISSN1090-6479
文件大小722.54KB
发表时间2015-5
DOI10.1134/s1063782615050036
页码649-657

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Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure