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[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance

Liu, Cheng; Wang, Hanxing; Yang, Shu; Lu, Yunyou; Liu, Shenghou; Tang, Zhikai; Jiang, Qimeng; Huang, Sen; Chen, Kevin J.
  • 作者Liu, Cheng; Wang, Hanxing; Yang, Shu; Lu, Yunyou; Liu, Shenghou; Tang, Zhikai; Jiang, Qimeng; Huang, Sen; Chen, Kevin J.
  • 文件大小633.85KB
  • 发表时间2015
  • DOI10.1109/ISPSD.2015.7123427
  • 页码213-216
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