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Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches

Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches

Ryan, C.; Olszewski, Z.; Houlihan, R.; O'Mahony, C.; Blake, A.; Duane, R.
  • 期刊名称Applied Physics Letters
  • 作者Ryan, C.; Olszewski, Z.; Houlihan, R.; O'Mahony, C.; Blake, A.; Duane, R.
  • 卷第106卷
  • 期第17期
  • 印刷ISSN0003-6951
  • 电子ISSN1077-3118
  • 文件大小1066.69KB
  • 发表时间2015-04-27
  • DOI10.1063/1.4919718
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