Fast Wafer-Level Stress-and-Sense Methodology for Characterization of Ring-Oscillator Degradation in Advanced CMOS Technologies
- 期刊名称IEEE Transactions on Electron Devices
- 作者Kerber, Andreas; Wan, Xinggong; Liu, Yang; Nigam, Tanya
- 卷第62卷
- 期第5期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小3145.30KB
- 发表时间2015-5
- DOI10.1109/TED.2015.2415414
- 页码1427-1432
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