A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate
Jeong, Woopyo; Im, Jae-woo; Kim, Doo-Hyun; Nam, Sang-Wan; Shim, Dong-Kyo; Choi, Myung-Hoon; Yoon, Hyun-Jun; Kim, Dae-Han; Kim, You-Se; Park, Hyun-Wook; Kwak, Dong-Hun; Park, Sang-Won; Yoon, Seok-Min; Hahn, Wook-Ghee; Ryu, Jin-Ho; Shim, Sang-Won; Kang, Kyung-Tae; Ihm, Jeong-Don; Kim, In-Mo; Lee, Doo-Sub; Cho, Ji-Ho; Kim, Moo-Sung; Jang, Jae-Hoon; Hwang, Sang-Won; Byeon, Dae-Seok; Yang, Hyang-Ja; Park, Kitae; Kyung, Kye-Hyun; Choi, Jeong-Hyuk
- 期刊名称IEEE Journal of Solid-State Circuits
- 作者Jeong, Woopyo; Im, Jae-woo; Kim, Doo-Hyun; Nam, Sang-Wan; Shim, Dong-Kyo; Choi, Myung-Hoon; Yoon, Hyun-Jun; Kim, Dae-Han; Kim, You-Se; Park, Hyun-Wook; Kwak, Dong-Hun; Park, Sang-Won; Yoon, Seok-Min; Hahn, Wook-Ghee; Ryu, Jin-Ho; Shim, Sang-Won; Kang, Kyung-Tae; Ihm, Jeong-Don; Kim, In-Mo; Lee, Doo-Sub; Cho, Ji-Ho; Kim, Moo-Sung; Jang, Jae-Hoon; Hwang, Sang-Won; Byeon, Dae-Seok; Yang, Hyang-Ja; Park, Kitae; Kyung, Kye-Hyun; Choi, Jeong-Hyuk
- 印刷ISSN0018-9200
- 电子ISSN1558-173X
- 文件大小3705.01KB
- 发表时间2015
- DOI10.1109/JSSC.2015.2474117
- 页码1-9