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Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools

Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools

G. Betti Beneventi; S. Reggiani; A. Gnudi; E. Gnani; A. Aliane; N. Collaert; A. Mocuta; A. Thean; G. Baccarani
  • 作者G. Betti Beneventi; S. Reggiani; A. Gnudi; E. Gnani; A. Aliane; N. Collaert; A. Mocuta; A. Thean; G. Baccarani
  • 文件大小207.32KB
  • 发表时间2015
  • DOI10.1109/ULIS.2015.7063818
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