2H-silicon carbide epitaxial growth onc-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments
- 期刊名称Electronic Materials Letters
- 作者T. Luong; B. T. Tran; Y. Ho; T. Wei; Y. Wu; T. Yen; L. Wei; J. Maa; E. Y. Chang
- 卷第11卷
- 期第3期
- 印刷ISSN1738-8090
- 电子ISSN2093-6788
- 文件大小1289.29KB
- 发表时间2015-5
- DOI10.1007/s13391-015-4208-9
- 页码352-359
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