Annealing effects on the electrical, structural and morphological properties of Ti/p-GaN/Ni/Au Schottky diode
- 期刊名称Applied Physics A
- 作者Nagaraju, G.; Rao, L. Dasaradha; Reddy, V. Rajagopal
- 卷第121卷
- 期第1期
- 印刷ISSN0947-8396
- 电子ISSN1432-0630
- 文件大小4169.44KB
- 发表时间2015-10
- DOI10.1007/s00339-015-9396-5
- 页码131-140
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