Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

• 期刊名称AIP Advances
• 作者Lee, Sung Bo; Ju, Jin-Woo; Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu; Han, Heung Nam; Lee, Dong Nyung
• 卷第5卷
• 期第7期
• 电子ISSN2158-3226
• 文件大小9641.94KB
• 发表时间2015-07
• DOI10.1063/1.4927770