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Resistive switching and electrical control of ferromagnetism in a Ag/HfO
<sub/>2</sub>
/Nb:SrTiO
<sub/>3</sub>
/Ag resistive random access memory (RRAM) device at room temperature

Resistive switching and electrical control of ferromagnetism in a Ag/HfO ₂ /Nb:SrTiO ₃ /Ag resistive random access memory (RRAM) device at room temperature

Ren, Shaoqing; Zhu, Gengchang; Xie, Jihao; Bu, Jianpei; Qin, Hongwei; Hu, Jifan

期刊名称Journal of Physics: Condensed Matter
作者Ren, Shaoqing; Zhu, Gengchang; Xie, Jihao; Bu, Jianpei; Qin, Hongwei; Hu, Jifan
卷第28卷
期第5期
印刷ISSN0953-8984
电子ISSN1361-648X
文件大小654.83KB
发表时间2016-02-10
DOI10.1088/0953-8984/28/5/056001

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