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[IEEE 2016 IEEE/ACES International Conference on Wireless Information Technology and Systems (ICWITS) and Applied Computational Electromagnetics (ACES) - Honolulu, HI, USA (2016.3.13-2016.3.18)] 2016 IEEE/ACES International Conference on Wireless Information Technology and Systems (ICWITS) and Applied Computational Electromagnetics (ACES) - Investiogation of linearity improvement with dynamic gate bias technique for flat gain or phase of an 10 W GaN HEMT power amplifier

[IEEE 2016 IEEE/ACES International Conference on Wireless Information Technology and Systems (ICWITS) and Applied Computational Electromagnetics (ACES) - Honolulu, HI, USA (2016.3.13-2016.3.18)] 2016 IEEE/ACES International Conference on Wireless Information Technology and Systems (ICWITS) and Applied Computational Electromagnetics (ACES) - Investiogation of linearity improvement with dynamic gate bias technique for flat gain or phase of an 10 W GaN HEMT power amplifier

Gecan, Dragan; Olavsbraten, Morten; Gjertsen, Karl M.
  • 作者Gecan, Dragan; Olavsbraten, Morten; Gjertsen, Karl M.
  • 文件大小381.42KB
  • 发表时间2016
  • DOI10.1109/ropaces.2016.7465391
  • 页码1-2
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