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Performance Upper Limit of sub-10 nm Monolayer MoS
<sub/>2</sub>
Transistors

Performance Upper Limit of sub-10 nm Monolayer MoS ₂ Transistors

Ni, Zeyuan; Ye, Meng; Ma, Jianhua; Wang, Yangyang; Quhe, Ruge; Zheng, Jiaxin; Dai, Lun; Yu, Dapeng; Shi, Junjie; Yang, Jinbo; Watanabe, Satoshi; Lu, Jing

期刊名称Advanced Electronic Materials
作者Ni, Zeyuan; Ye, Meng; Ma, Jianhua; Wang, Yangyang; Quhe, Ruge; Zheng, Jiaxin; Dai, Lun; Yu, Dapeng; Shi, Junjie; Yang, Jinbo; Watanabe, Satoshi; Lu, Jing
印刷ISSN2199-160X
文件大小1271.09KB
发表时间2016-08
DOI10.1002/aelm.201600191

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