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[IEEE ESSDERC 2016 - 46th European Solid-State Device Research Conference - Lausanne, Switzerland (2016.9.12-2016.9.15)] 2016 46th European Solid-State Device Research Conference (ESSDERC) - Adhesion lithography to fabricate MoS<inf>2</inf> FETs with self-assembled monolayer-based gate dielectrics

[IEEE ESSDERC 2016 - 46th European Solid-State Device Research Conference - Lausanne, Switzerland (2016.9.12-2016.9.15)] 2016 46th European Solid-State Device Research Conference (ESSDERC) - Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics

Kawanago, Takamasa; Ikoma, Ryo; Wanjing, Du; Oda, Shunri

作者Kawanago, Takamasa; Ikoma, Ryo; Wanjing, Du; Oda, Shunri
文件大小2959.33KB
发表时间2016
DOI10.1109/ESSDERC.2016.7599643
页码291-294

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