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[IEEE 2016 International Conference on VLSI Systems, Architectures, Technology and Applications (VLSI-SATA) - Bengaluru, India (2016.1.10-2016.1.12)] 2016 International Conference on VLSI Systems, Architectures, Technology and Applications (VLSI-SATA) - Performance of asymmetric gate oxide on gate-drain overlap in Si and Si<inf>1−x</inf>Ge<inf>x</inf> double gate tunnel FETs

[IEEE 2016 International Conference on VLSI Systems, Architectures, Technology and Applications (VLSI-SATA) - Bengaluru, India (2016.1.10-2016.1.12)] 2016 International Conference on VLSI Systems, Architectures, Technology and Applications (VLSI-SATA) - Performance of asymmetric gate oxide on gate-drain overlap in Si and Si1−xGex double gate tunnel FETs

Poorvasha, S.; Lakshmi, B.
  • 作者Poorvasha, S.; Lakshmi, B.
  • 文件大小3169.03KB
  • 发表时间2016
  • DOI10.1109/VLSI-SATA.2016.7593036
  • 页码1-4
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