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Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Degradation and Circuit Design Considerations

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Degradation and Circuit Design Considerations

Wang, Hanxing; Wei, Jin; Xie, Ruiliang; Liu, Cheng; Tang, Gaofei; Chen, Kevin J.
  • 期刊名称IEEE Transactions on Power Electronics
  • 作者Wang, Hanxing; Wei, Jin; Xie, Ruiliang; Liu, Cheng; Tang, Gaofei; Chen, Kevin J.
  • 印刷ISSN0885-8993
  • 电子ISSN1941-0107
  • 文件大小2062.90KB
  • 发表时间2016
  • DOI10.1109/TPEL.2016.2610460
  • 页码1-1
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