Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Degradation and Circuit Design Considerations
Wang, Hanxing; Wei, Jin; Xie, Ruiliang; Liu, Cheng; Tang, Gaofei; Chen, Kevin J.
- 期刊名称IEEE Transactions on Power Electronics
- 作者Wang, Hanxing; Wei, Jin; Xie, Ruiliang; Liu, Cheng; Tang, Gaofei; Chen, Kevin J.
- 印刷ISSN0885-8993
- 电子ISSN1941-0107
- 文件大小2062.90KB
- 发表时间2016
- DOI10.1109/TPEL.2016.2610460
- 页码1-1