A direct method to extract extrinsic capacitances of rf SOI MOSFETs using common source-body and gate-body configurations
- 期刊名称Microwave and Optical Technology Letters
- 作者Ahn, Jahyun; Lee, Seonghearn
- 卷第58卷
- 期第12期
- 印刷ISSN0895-2477
- 文件大小403.26KB
- 发表时间2016-12
- DOI10.1002/mop.30166
- 页码2851-2853