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Reversible transition between bipolar and unipolar resistive switching in Cu
<sub/>2</sub>
O/Ga
<sub/>2</sub>
O
<sub/>3</sub>
binary oxide stacked layer

Reversible transition between bipolar and unipolar resistive switching in Cu ₂ O/Ga ₂ O ₃ binary oxide stacked layer

Zhi, Y. S.; Li, P. G.; Wang, P. C.; Guo, D. Y.; An, Y. H.; Wu, Z. P.; Chu, X. L.; Shen, J. Q.; Tang, W. H.; Li, C. R.

期刊名称AIP Advances
作者Zhi, Y. S.; Li, P. G.; Wang, P. C.; Guo, D. Y.; An, Y. H.; Wu, Z. P.; Chu, X. L.; Shen, J. Q.; Tang, W. H.; Li, C. R.
卷第6卷
期第1期
电子ISSN2158-3226
文件大小1504.34KB
发表时间2016-01
DOI10.1063/1.4941061

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