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Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

Hutchinson, David; Mathews, Jay; Sullivan, Joseph T.; Akey, Austin; Aziz, Michael J.; Buonassisi, Tonio; Persans, Peter; Warrender, Jeffrey M.
  • 期刊名称AIP Advances
  • 作者Hutchinson, David; Mathews, Jay; Sullivan, Joseph T.; Akey, Austin; Aziz, Michael J.; Buonassisi, Tonio; Persans, Peter; Warrender, Jeffrey M.
  • 卷第6卷
  • 期第5期
  • 电子ISSN2158-3226
  • 文件大小442.77KB
  • 发表时间2016-05
  • DOI10.1063/1.4948986
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