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[IEEE 2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2016.6.23-2016.6.24)] 2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Magnetoresistance effect of Ga-Sn-O thin-film device

[IEEE 2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2016.6.23-2016.6.24)] 2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Magnetoresistance effect of Ga-Sn-O thin-film device

Fukawa, Asuka; Imanishi, Kota; Miyamura, Shogo; Matsuda, Tokiyoshi; Kimura, Mutsumi
  • 作者Fukawa, Asuka; Imanishi, Kota; Miyamura, Shogo; Matsuda, Tokiyoshi; Kimura, Mutsumi
  • 文件大小382.55KB
  • 发表时间2016
  • DOI10.1109/imfedk.2016.7521685
  • 页码1-2
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