Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon
- 期刊名称Journal of Applied Physics
- 作者Stübner, R.; Scheffler, L.; Kolkovsky, Vl.; Weber, J.
- 卷第119卷
- 期第20期
- 印刷ISSN0021-8979
- 电子ISSN1089-7550
- 文件大小892.46KB
- 发表时间2016-05-28
- DOI10.1063/1.4952702
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