High-Breakdown, High-fmax Multiport Stacked-Transistor Topologies for the W-Band Power Amplifiers

• 期刊名称IEEE Journal of Solid-State Circuits
• 作者Datta, Kunal; Hashemi, Hossein
• 印刷ISSN0018-9200
• 电子ISSN1558-173X
• 文件大小9441.60KB
• 发表时间2017
• DOI10.1109/JSSC.2016.2641464
• 页码1-15