Synaptic Characteristics of Ag/AgInSbTe/Ta-Based Memristor for Pattern Recognition Applications
- 期刊名称IEEE Transactions on Electron Devices
- 作者Zhang, Yang; Li, Yi; Wang, Xiaoping; Friedman, Eby G.
- 卷第64卷
- 期第4期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小2222.20KB
- 发表时间2017-4
- DOI10.1109/ted.2017.2671433
- 页码1806-1811
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