Current–voltage characteristics of high-voltage 4H-SiCp+–n0–n+diodes in the avalanche breakdown mode
- 期刊名称Semiconductors
- 作者Ivanov, P. A.; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V.
- 卷第51卷
- 期第3期
- 印刷ISSN1063-7826
- 电子ISSN1090-6479
- 文件大小318.66KB
- 发表时间2017-3
- DOI10.1134/s1063782617030095
- 页码374-378
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