A 29.5 dBm Class-E Outphasing RF Power Amplifier With Efficiency and Output Power Enhancement Circuits in 45nm CMOS
- 期刊名称IEEE Transactions on Circuits and Systems I: Regular Papers
- 作者Banerjee, Aritra; Hezar, Rahmi; Ding, Lei; Haroun, Baher
- 印刷ISSN1549-8328
- 电子ISSN1558-0806
- 文件大小3513.09KB
- 发表时间2017
- DOI10.1109/TCSI.2017.2695243
- 页码1-12
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