A Comprehensive Theoretical Analysis of Hole Ballistic Velocity in Si, SiGe, and Ge: Effect of Uniaxial Strain, Crystallographic Orientation, Body Thickness, and Gate Architecture

• 期刊名称IEEE Transactions on Electron Devices
• 作者Teherani, James T.
• 印刷ISSN0018-9383
• 电子ISSN1557-9646
• 文件大小3290.43KB
• 发表时间2017
• DOI10.1109/ted.2017.2708691
• 页码1-8