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[IEEE 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2017.4.24-2017.4.27)] 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Asymmetric S/D contacts with BN tunneling barrier on black phosphorous FETs

[IEEE 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2017.4.24-2017.4.27)] 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Asymmetric S/D contacts with BN tunneling barrier on black phosphorous FETs

Lingming Yang, ; Mengwei Si, ; Qing Paduano, ; Snure, Mike; Peide Ye,
  • 作者Lingming Yang, ; Mengwei Si, ; Qing Paduano, ; Snure, Mike; Peide Ye,
  • 文件大小627.15KB
  • 发表时间2017
  • DOI10.1109/VLSI-TSA.2017.7942479
  • 页码1-2
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