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Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs

Di, Shaoyan; Shen, Lei; Lun, Zhiyuan; Chang, Pengying; Zhao, Kai; Lu, Tiao; Du, Gang; Liu, Xiaoyan

期刊名称Chinese Physics B
作者Di, Shaoyan; Shen, Lei; Lun, Zhiyuan; Chang, Pengying; Zhao, Kai; Lu, Tiao; Du, Gang; Liu, Xiaoyan
卷第26卷
期第4期
印刷ISSN1674-1056
文件大小864.14KB
发表时间2017-04
DOI10.1088/1674-1056/26/4/047201