A Drift-Tolerant Read/Write Scheme for Multilevel Memristor Memory
- 期刊名称IEEE Transactions on Nanotechnology
- 作者Yilmaz, Yalcin; Mazumder, Pinaki
- 卷第16卷
- 期第6期
- 印刷ISSN1536-125X
- 电子ISSN1941-0085
- 文件大小2443.02KB
- 发表时间2017-11
- DOI10.1109/TNANO.2017.2741504
- 页码1016-1027
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