Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement
- 期刊名称Journal of Semiconductors
- 作者Poorvasha, S.; Lakshmi, B.
- 卷第39卷
- 期第5期
- 印刷ISSN1674-4926
- 文件大小1701.24KB
- 发表时间2018-05
- DOI10.1088/1674-4926/39/5/054001
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