Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations
Sun, Yabin; Liu, Ziyu; Li, Xiaojin; Ren, Jiaqi; Zheng, Fanglin; Shi, Yanling
- 期刊名称Journal of Physics D: Applied Physics
- 作者Sun, Yabin; Liu, Ziyu; Li, Xiaojin; Ren, Jiaqi; Zheng, Fanglin; Shi, Yanling
- 印刷ISSN0022-3727
- 电子ISSN1361-6463
- 文件大小1031.76KB
- 发表时间2018-05-25
- DOI10.1088/1361-6463/aac7d0