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Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations

Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations

Sun, Yabin; Liu, Ziyu; Li, Xiaojin; Ren, Jiaqi; Zheng, Fanglin; Shi, Yanling
  • 期刊名称Journal of Physics D: Applied Physics
  • 作者Sun, Yabin; Liu, Ziyu; Li, Xiaojin; Ren, Jiaqi; Zheng, Fanglin; Shi, Yanling
  • 印刷ISSN0022-3727
  • 电子ISSN1361-6463
  • 文件大小1031.76KB
  • 发表时间2018-05-25
  • DOI10.1088/1361-6463/aac7d0
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