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[IEEE 2018 76th Device Research Conference (DRC) - Santa Barbara, CA, USA (2018.6.24-2018.6.27)] 2018 76th Device Research Conference (DRC) - An Improved 1T-DRAM Cell Using TiO<inf>2</inf>as the Source and Drain of an n-Channel PD-SOI MOSFET

[IEEE 2018 76th Device Research Conference (DRC) - Santa Barbara, CA, USA (2018.6.24-2018.6.27)] 2018 76th Device Research Conference (DRC) - An Improved 1T-DRAM Cell Using TiO2as the Source and Drain of an n-Channel PD-SOI MOSFET

Chatterjee, Dibyendu; Kottantharayil, Anil

作者Chatterjee, Dibyendu; Kottantharayil, Anil
文件大小3656.22KB
发表时间2018
DOI10.1109/DRC.2018.8442180
页码1-2

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