Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p+−i−n+ Diode
- 期刊名称Technical Physics
- 作者Ivanov, P. A.; Potapov, A. S.; Grekhov, I. V.
- 卷第63卷
- 期第6期
- 印刷ISSN1063-7842
- 电子ISSN1090-6525
- 文件大小355.92KB
- 发表时间2018-6
- DOI10.1134/s1063784218060130
- 页码928-931
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