The Influence of Grain Boundary Interface Traps on Electrical Characteristics of Top Select Gate Transistor in 3D NAND Flash Memory
- 期刊名称Solid-State Electronics
- 作者Zou, Xingqi; Jin, Lei; Yan, Liang; Zhang, Yu; Ai, Di; Zhao, Chenglin; Xu, Feng; Li, Chunlong; Huo, Zongliang
- 印刷ISSN0038-1101
- 文件大小976.29KB
- 发表时间2018-12
- DOI10.1016/j.sse.2018.12.007
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