[IEEE 2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2018.12.1-2018.12.5)] 2018 IEEE International Electron Devices Meeting (IEDM) - A cost-efficient 28nm split-gate eFLASH memory featuring a HKMG hybrid bit cell and HV device

Richter, R.; Trentzsch, M.; Dunkel, S.; Muller, J.; Moll, P.; Bayha, B.; Mothes, K.; Henke, A.; Mazur, M.; Paul, J.; Krottenthaler, P.; Poth, J.; Jansen, S.; Huselitz, R.; Kim, H.; Zaka, A.; Herrmann, T.; Bazizi, E.M.; Beyer, S.; Ghazavi, P.; Om'mani, H.; Lemke, S.; Tkachev, Y.; Zhou, F.; Kim, J.; Liu, X.; Tiwari, V.; Do, N.

作者Richter, R.; Trentzsch, M.; Dunkel, S.; Muller, J.; Moll, P.; Bayha, B.; Mothes, K.; Henke, A.; Mazur, M.; Paul, J.; Krottenthaler, P.; Poth, J.; Jansen, S.; Huselitz, R.; Kim, H.; Zaka, A.; Herrmann, T.; Bazizi, E.M.; Beyer, S.; Ghazavi, P.; Om'mani, H.; Lemke, S.; Tkachev, Y.; Zhou, F.; Kim, J.; Liu, X.; Tiwari, V.; Do, N.
文件大小6.16KB
发表时间2018
DOI10.1109/iedm.2018.8614652

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[IEEE 2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2018.12.1-2018.12.5)] 2018 IEEE International Electron Devices Meeting (IEDM) - A cost-efficient 28nm split-gate eFLASH memory featuring a HKMG hybrid bit cell and HV device