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Theoretical Considerations on the Optimal Performance
of Sub-100 Nanometer Top-Gated Graphene Field-Effect Transistors

Theoretical Considerations on the Optimal Performance of Sub-100 Nanometer Top-Gated Graphene Field-Effect Transistors

Do, V. Nam; Le, H. Anh; Vu, V. Thieu

期刊名称Journal of Electronic Materials
作者Do, V. Nam; Le, H. Anh; Vu, V. Thieu
印刷ISSN0361-5235
电子ISSN1543-186X
文件大小890.75KB
发表时间2019-1-8
DOI10.1007/s11664-018-06920-x

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