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Determination of DC equivalent hot carrier stress times in scaled CMOS devices using novel AC stress methodology

Determination of DC equivalent hot carrier stress times in scaled CMOS devices using novel AC stress methodology

Kerber, Andreas; Nigam, Tanya
  • 期刊名称Microelectronics Reliability
  • 作者Kerber, Andreas; Nigam, Tanya
  • 卷第93卷
  • 印刷ISSN0026-2714
  • 文件大小1455.30KB
  • 发表时间2019-02
  • DOI10.1016/j.microrel.2018.12.012
  • 页码98-101
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