3D GaN nanoarchitecture for field-effect transistors
- 期刊名称Micro and Nano Engineering
- 作者Fatahilah, Muhammad Fahlesa; Strempel, Klaas; Yu, Feng; Vodapally, Sindhuri; Waag, Andreas; Wasisto, Hutomo Suryo
- 印刷ISSN2590-0072
- 文件大小2820.89KB
- 发表时间2019-4
- DOI10.1016/j.mne.2019.04.001
Patents AlertFlow Measurement and Instrumentation · 2002
Impact, <i>H</i> , and AuthorshipHaslam, Nick · Measurement: Interdisciplinary Research & Perspective · 2012
Silicon sensorsMiddelhoek, S; Bellekom, A A; Dauderstadt, U; French, P J; Hout, S R in `t; Kindt, W; Riedijk, F; Vellekoop, M J · Measurement Science and Technology · 1995
Letter from the EditorHauptmann, Peter · Measurement Science and Technology · 2009
Quantifying image qualitySharp, P F · Clinical Physics and Physiological Measurement · 1990
Induction coil sensors—a reviewTumanski, Slawomir · Measurement Science and Technology · 2007
A History of Effect Size IndicesHuberty, C. J · Educational and Psychological Measurement · 2002
Magnetic induction tomographyGriffiths, H · Measurement Science and Technology · 2001