Correction to “Trench Termination With SiO ₂ -Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices” [Dec 18 1900-1903]

• 期刊名称IEEE Electron Device Letters
• 作者Wang, Hengyu; Wang, Jue; Liu, Li; Li, Yucen; Wang, Baozhu; Xu, Hongyi; Yang, Shu; Sheng, Kuang
• 卷第40卷
• 期第2期
• 印刷ISSN0741-3106
• 电子ISSN1558-0563
• 文件大小7.92KB
• 发表时间2019-2
• DOI10.1109/LED.2018.2889811
• 页码353-353