Homogeneous P-N Junction Diode by Selective Doping Few layer MoSe2 Using Ultraviolet Ozone for High- Performance Photovoltaic Devices

Zheng, Xiaoming; Wei, Yuehua; Liu, Jinxin; Wang, Shitan; Shi, Jiao; Yang, Hang; Peng, Gang; Deng, Chuyun; Luo, Wei; Zhao, Yuan; Li, Youzhen; Sun, Kuang Lv; Wan, Wen; Xie, Haipeng; Gao, Yongli; Zhang, Xueao; Huang, Han

期刊名称Nanoscale
作者Zheng, Xiaoming; Wei, Yuehua; Liu, Jinxin; Wang, Shitan; Shi, Jiao; Yang, Hang; Peng, Gang; Deng, Chuyun; Luo, Wei; Zhao, Yuan; Li, Youzhen; Sun, Kuang Lv; Wan, Wen; Xie, Haipeng; Gao, Yongli; Zhang, Xueao; Huang, Han
印刷ISSN2040-3364
电子ISSN2040-3372
文件大小1692.82KB
发表时间2019
DOI10.1039/C9NR04212A

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Homogeneous P-N Junction Diode by Selective Doping Few layer MoSe2 Using Ultraviolet Ozone for High- Performance Photovoltaic Devices