[IEEE 2019 International Conference on IC Design and Technology (ICICDT) - SUZHOU, China (2019.6.17-2019.6.19)] 2019 International Conference on IC Design and Technology (ICICDT) - Characteristics of Ni/AlO x /Pt RRAM devices with various dielectric fabrication temperatures
- 作者Shen, Z J; Zhao, C; Zhao, C Z; Mitrovic, I Z; Yang, L; Xu, W Y; Lim, E G; Luo, T; Huang, Y B
- 文件大小409.35KB
- 发表时间2019
- DOI10.1109/icicdt.2019.8790838
- 页码1-4
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