Radiated EMI evolution of power SiC MOSFET in a boost converter after short-circuit aging tests
- 期刊名称Microelectronics Reliability
- 作者Douzi, Shawki; Kadi, Moncef; Boulzazen, Habib; Tlig, Mohamed; Ben Hadj Slama, Jaleleddine
- 印刷ISSN0026-2714
- 文件大小1277.18KB
- 发表时间2019-9
- DOI10.1016/j.microrel.2019.113398
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