Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment

Peng, Liyuan; Zhao, Degang; Zhu, Jianjun; Wang, Wenjie; Liang, Feng; Jiang, Desheng; Liu, Zongshun; Chen, Ping; Yang, Jing; Liu, Shuangtao; Xing, Yao; Zhang, Liqun

期刊名称Applied Surface Science
作者Peng, Liyuan; Zhao, Degang; Zhu, Jianjun; Wang, Wenjie; Liang, Feng; Jiang, Desheng; Liu, Zongshun; Chen, Ping; Yang, Jing; Liu, Shuangtao; Xing, Yao; Zhang, Liqun
印刷ISSN0169-4332
文件大小8503.86KB
发表时间2019-11
DOI10.1016/j.apsusc.2019.144283

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Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment