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Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors

Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors

Cazimajou, T.; Mouis, M.; Legallais, M.; Nguyen, T.T.T.; Ternon, C.; Salem, B.; Ghibaudo, G.
  • 期刊名称Solid-State Electronics
  • 作者Cazimajou, T.; Mouis, M.; Legallais, M.; Nguyen, T.T.T.; Ternon, C.; Salem, B.; Ghibaudo, G.
  • 印刷ISSN0038-1101
  • 文件大小3296.66KB
  • 发表时间2019-11
  • DOI10.1016/j.sse.2019.107725
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